Heteroepitaxial growth of GaSb on Si(0 0 1) substratesAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 21-25, issn 0022-0248, 5 p.Article

CW operation at 1.34 μm of an InGaSb quantum-dot vertical-cavity surface-emitting laser (VCSEL) on GaAs substrateYAMAMOTO, Naokatsu; AKAHANE, Kouichi; GOZU, Shin-Ichiro et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 564-565, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Stacking of over 150 layers of InAs quantum dots on InP(311)B substratesAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 85-88, isbn 0-7803-8595-0, 1Vol, 4 p.Conference Paper

Residual carrier density in GaSb grown on Si substratesAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Thin solid films. 2006, Vol 515, Num 2, pp 748-751, issn 0040-6090, 4 p.Conference Paper

1.5 μm emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substratesAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 81-84, issn 1386-9477, 4 p.Conference Paper

Change in band configuration of In_0.57Ga_0.43As_1-xSb_x /AlAs_0.48Sb_0.52 quantum wells from type-II to type-I by increasing Sb composition xGOZU, Shin-Ichiro; AKAHANE, Kouichi; YAMAMOTO, Naokatsu et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 32, Num 1-2, pp 230-233, issn 1386-9477, 4 p.Conference Paper

Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layersAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Journal of crystal growth. 2005, Vol 283, Num 3-4, pp 297-302, issn 0022-0248, 6 p.Article

Growth of antimonide compound semiconductor on Si(001) substrateAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 63890O.1-63890O.10, issn 0277-786X, isbn 0-8194-6487-2, 1VolConference Paper

InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550 nmGOZU, Shin-Ichiro; MOZUME, Teruo; KUWATSUKA, Haruhiko et al.Journal of crystal growth. 2013, Vol 378, pp 134-136, issn 0022-0248, 3 p.Conference Paper

(In)GaSb/AlGaSb quantum wells grown on Si substratesAKAHANE, Kouichi; YAMAMOTO, Naokatsu; GOZU, Shin-Ichiro et al.Thin solid films. 2007, Vol 515, Num 10, pp 4467-4470, issn 0040-6090, 4 p.Conference Paper